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  Datasheet File OCR Text:
 SHINDENGEN
General Purpose Rectifiers
SIL Bridges
D20XB80
800V 20A
FEATURES *oe Single In-Line Package Thin *oe High current capacity with Small Package *oe High IFSM *oe Superior Thermal Conductivity APPLICATION
OUTLINE DIMENSIONS
Case : 5S
Unit : mm
*oe power supply Switching
*oe Home Appliances, Office Equipment *oe Factory Automation, Inverter
RATINGS
*oe* Absolute Maximum Ratings (If not specified Tc=25*Z) @ Item Symbol Conditions RatingsUnit Storage Temperature Tstg -40*150*Z Operating Junction Temperature Tj 150 *Z V Maximum Reverse Voltage 800 V RM IO Current Average Rectified Forward 50Hz sine wave, R-load With heatsink 20 Tc=87*Z A 50Hz sine wave, R-load Without heatsink Ta=25*Z 3.5 IFSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 240 A 2 Current Squared Time I2 1ms*...t*10ms*@Tj=25*Z t 200 As Dielectric Strength VdisTerminals to case, AC 1 minute 2.5 kV Mounting Torque R i F TOR* ecommended torque* 0.5Nm*j 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions RatingsUnit V IF Forward Voltage of per diode F =10A, Pulse measurement, Rating Max.1.1 V IR V=V,M Reverse Current Max.10EA R R Pulse measurement, Rating of per diode AEjc junction to case *@*@With heatsink Max.1.5 Thermal Resistance AEjljunction to lead * * Without heatsink *Z/W @@ Max.5 AEja junction to ambient Without heatsink Max.22
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D20XBx
100
Forward Voltage
10
Forward Current IF [A]
Tc=150C [TYP]
Tc=25C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D20XBx
80 70
Forward Power Dissipation
Forward Power Dissipation PF [W]
SIN
60 50 40 30 20 10 0
0
5
10
15
20
25
30
Average Rectified Forward Current IO [A]
Tj = 150C Sine wave
D20XBx
30
Derating Curve
Heatsink Tc Tc
Average Rectified Forward Current IO [A]
25 SIN 20
15
10
5
0 80
90
100
110
120
130
140
150
160
Case Temperature Tc [C]
Sine wave R-load with heatsink
D20XBx
5
Derating Curve
Average Rectified Forward Current IO [A]
4 SIN
PCB Glass-epoxy substrate Soldering land 5mm
3
2
1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
Sine wave R-load Free in air
D20XBx
300
Peak Surge Forward Capability
IFSM
10ms 10ms
250
1 cycle
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25C before surge current is applied
200
150
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]


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